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1214gn - 120e/el /ep datasheet 120w l - band radar gan power transistor and pallet amplifier downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 2 microsemi makes no warranty, representation, or guarantee reg arding the information contained herein or the suitability of it s products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. the products sold hereunder and any other produc ts sold by microsemi have been subject to limi ted testing and should not be used in conjunction with mission - critical equipment or applications. any performance specifications are believed to be reliable but are not verified, and buyer mus t conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end - products. buyer shall not rely on any data and perfor mance specifications or parameters provided by microsemi. it is the buyers responsibilit y to independently determine suitability of any products and to test and verify the same. the information provided by microsemi he reunder is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the b uyer. microsemi does not grant, explicitly or implicitly, to an y party any patent rights, licenses, or any other ip rights, whether wi th regard to such informa tion itself or anything described by such information. information provided in this document is proprietary to microsemi, and microsemi reserves the right to make any changes to the information in this document or to any products and servic es at any time w ithout notice. about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive por tfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. products incl ude high - performance and radi ation - hardened analog mixed - signal integrated circuits, fpgas, socs and asics; power management produc ts; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processin g devices; rf solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti - tamper products; ethernet solutions; power - over - ethernet ics and midspans; as well as custom design capabilities and services. micro semi is headquartered i n aliso viejo, calif., and has approximately 4,800 employees globally. learn more at www.microsemi.com . ?2016 microsemi corporation. all rights reserved. microsemi and the microsemi logo are registered trademarks o f microsemi corporation. all other trademarks and service marks are the pr operty of their respective owners. microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa: +1 (800) 713 - 4113 outside the usa: +1 (949) 380 - 6100 sales: +1 (949) 380 - 6136 fax: +1 (949) 215 - 4996 e- mail: sales.support@microsemi.com www.micro semi.com downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 3 revision history 1.1 revision 1.0 revision 1.0 was the first publication of this document. downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 4 contents revision history .............................................................................................................................. 3 1.1 revision 1.0 ................................................................................................................................................ 3 2 product overview .................................................................................................................... 7 2.1 applications ............................................................................................................................................... 7 2.1.1 key features ................................................................................................................................ 8 3 electrical specifications ............................................................................................................ 9 3.1 absolute maximum ratings ....................................................................................................................... 9 3.2 electrical characteristics at 25 c ............................................................................................................... 9 3.3 functiona l characteristics at 25 c ............................................................................................................ 9 3.4 typical broadband performance data (300 s, 10% pulsing) .................................................................. 10 3.5 critical performance at p in = 4 w (34 dbm) ............................................................................................. 11 4 transistor impedance information ......................................................................................... 12 5 transistor test i nformation .................................................................................................... 13 6 package outline and pin information .................................................................................... 14 6.1 55 - qq common source package dimensions and pin information ......................................................... 14 6.2 55 - qqp common source package dimensions and pin information ...................................................... 15 6.3 overall pallet dimensions ........................................................................................................................ 16 downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 5 list of figures figure 1 case outline 55 - qq common source (0.160" 0.550") ................................................................................ 7 figure 2 case outline 55 - qqp common source (0.160" 0.230") .............................................................................. 7 figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") ................................................................................. 7 figure 4 typical broadband performance data graphs ............................................................................................. 10 f igure 5 impedance definition ................................................................................................................................... 12 figure 6 55 - qq package dimensions and pin information ........................................................................................ 14 figure 7 55 - qqp package dimensions and pin information ...................................................................................... 15 figure 8 pallet package dimensions .......................................................................................................................... 16 downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 6 list of tables table 1 absolut e maximum ratings ............................................................................................................................ 9 table 2 typical electrical characteristics at 25 c ........................................................................................................ 9 table 3 typical functional characteristics at 25 c ...................................................................................................... 9 table 4 typical broadband performance data (300 s, 10% pulsing) ....................................................................... 10 table 5 critical performance at p in = 4 w (34 dbm) .................................................................................................. 11 table 6 55 - qq package dimensions .......................................................................................................................... 14 table 7 55 - qqp package dimensions ........................................................................................................................ 15 downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 7 2 p roduct overview the 1214gn - 120e/el /e p is an internally matched, common source , class ab, gan on sic hemt transistor capable of providing over 17 db typical power gain , 120 w of pulsed rf output power under 300 s pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 mhz band. the transistor has internal pre - match for optimal performance. this hermetically sealed transisto r is available in two package types , as well as mounted on a compact foot print 50? in/out pallet , and is specifically designed for l- band pulsed primary radar applications. it utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. export classification: ear - 99 . figure 1 case outline 55 - qq common source (0.160" 0.550") figure 2 case outline 55 - qqp common source (0.160" 0.230") figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") 2.1 applications t he 1214gn - 120e and 1214gn - 120el transistors and the 1214gn - 120ep pallet are specifically designed for l- band pulsed primary radar applications. downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 8 2.1.1 key features the following are the key feat ures of the 1214gn - 120e/el /ep e- series earless/eared gan t ransistor products : ? 1200 C 1400 mhz, 120 w p ulsed o utput p ower, 300 s 10% p ulsing ? common source , class ab, 50 v b ias voltage ? high e fficiency: >60% typical a cross the f requency b and ? extremely compact s ize ? high p ower g ain: >16.8 db ? excellent g ain f latness ? ideal for r adar, l - band a vionics, c ommunications , and i ndustrial applications ? utilizes all - gold metallization and eutectic die attach for highest reliability ? 50 in /o ut lumped element , very small footprint , plug -and- play pallets available downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 9 3 e lectrical specifications 3.1 a bsolute maximum ratings the following table shows the absolute maximum ratings at 25 c unless otherwise specified. table 1 absolute maximum ratings rating value units max imum p ower d issipation device d issipation at 25 c 265 w maximum voltage and cur rent drain - source v oltage (v dss ) 125 v gate - source v oltage (v gs ) C 8 to 0 v maximum t emperatures storage t emperature (t stg ) C 55 to 125 c operating j unction t emperature 200 c 3.2 e lectrical characteristics at 25 c the following table shows the typical electrical characteristics at 25 c table 2 typical electrical characteristics at 25 c symbol charac teristics test conditions min typ max units p out output p ower p in = 2.5 w, freq = 1200, 1300, 1400 mhz 120 130 w g p power g ain p in = 2.5 w, freq = 1200, 1300, 1400 mhz 16.8 17.16 db ? d drain e fficiency p in = 2.5 w, freq = 1200, 1300, 1400 mhz 57 65 % dr droop p in = 2.5 w, freq = 1200, 1300, 1400 mhz 0.15 0.6 db vswr -t load m ismatch t olerance p in = 2.5 w, freq = 1500 mhz, 100 s -10% 5:1 ? jc junction -c ase t hermal r esistance 300 s , 10% duty cycle 1.25 c /w bias condition: v dd = 50 v, i dq = 30 ma constant current (v gs = C 2.0 to C 4.5 v typical) 3.3 f unctional characteristics at 25 c table 3 typical functional characteristics at 25 c symbol characteristic test conditions min typ max units i d(off ) drain leakage current v gs = C8 v, v d = 125 v 12 ma i g(off) gate leakage current v gs = C8 v, v d = 0 v 4 ma downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 10 3.4 t ypical broadband performance data (300 s, 10% pulsing) table 4 typical broadband performance data (300 s, 10% pulsing) frequency p in (w) p out (w) i d (ma) i rl (db) ? d (%) g p (db) droop (db) 1200 mhz 2.5 146 477 C7.0 65 17.65 0.15 1300 mhz 2.5 141 440 C10.0 69 17.50 0.15 1400 mhz 2.5 141 400 C8.5 76 17.50 0.14 figure 4 typical broadband performance data graphs downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 11 3.5 c ritical performance at p in = 4 w ( 34 dbm ) table 5 critical performance at p in = 4 w ( 34 dbm ) freq (ghz) test condition p out (w) g p (db) ? d (%) droop (db) 1.2 300 s C 10% 146 17.65 65 0.15 1.2 1 ms C 10% 144 17.60 66 0.25 1.2 3 ms C 30% 135 17.30 61 0.60 1.3 300 s C 10% 141 17.50 69 0.15 1.3 1 ms C 10% 144 17.60 70 0.25 1.3 3 ms C 30% 143 17.60 67 0.40 1.4 300 s C 10% 141 17.50 76 0.15 1.4 1 ms C 10% 138 17.40 75 0.25 1.4 3 ms C 30% 144 17.60 74 0.40 downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 12 4 t ransistor impedance information the following diagram shows the transistor impedance information f or 1214gn - 120 e/el/ep. figure 5 impedance definition input matching network output matching network g s d z s o ur ce z l oad 50 ? 50 ? note : z s o ur ce is looking into the input circuit z l oad is looking into the output circuit for information about source and load impedances for 1214gn - 120 e/el/ep, contact your microsemi representative. downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 13 5 t ransistor test i nformation for the latest transistor test information for 1214gn - 120e/el/ep, contact your microsemi representative. downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 14 6 p ackage outline and p in information the 1214gn - 120e trans istor is available in the 55 - qqp case outline and the 1214gn - 120el transistor is ava ila b le in the 55 - qqp case outline. the 1214gn - 120ep is available in the 9 0- 1214gn - 120ep pallet outline. all three products are configured for common source operation. 6.1 55- qq common source package dimension s and p in information figure 6 55 - qq package dimensions and pin information pin 1: drain, pin 2: source, pin 3: gate table 6 55 - qq package dimensions dim millimeters tol (mm) inches tol ( in.) a 13.970 0.250 0.550 0.010 b 4.570 0.250 0.160 0.010 c 3.860 0.330 0.152 0.013 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.700 0.130 0.067 0.005 g 0.130 0.025 0.005 0.001 h 8.130 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 2.54 dia 0.130 0.100 dia 0.005 l 1.270 0.130 0.050 0.005 m 9.530 0.130 0.375 0.005 downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 15 6.2 55- qqp common source package dim ensions and pin information figure 7 55 - qqp package dimensions and pin information pin 1: drain, pin 2: source, pin 3: gate table 7 55 - qqp package dimensions dim millimeters tol (mm) inches tol (in.) a 5.840 0.250 0.230 0.010 b 4.060 0.250 0.160 0.010 c 3.170 0.050 0.125 0.002 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.570 0.130 0.062 0.005 g 0.130 0.020 0.005 0.001 h 8.120 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 1.400 0.130 0.055 0.005 downloaded from: http:///
120w l - band radar gan power transistor and pallet amplifier 16 6.3 overall pallet dimensions figure 8 pallet package dimensions dime nsions 1.200" 0.600" 0.150" downloaded from: http:///

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